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| Transistors 2SC1047 Silicon NPN epitaxial planar type For high-frequency amplification 5.00.2 Unit: mm 4.00.2 * Optimum for RF amplification of FM/AM radios * High transition frequency fT 0.70.1 0.70.2 12.90.5 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 3 20 400 150 -55 to +150 Unit V V V 2.30.2 0.45+0.15 -0.1 2.5+0.6 -0.2 1 23 5.10.2 0.45+0.15 -0.1 2.5+0.6 -0.2 Features mA mW C C 1: Emitter 2: Collector 3: Base TO-92-B1 Package Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio * Common-emitter reverse transfer capacitance Transition frequency Power gain Noise figure Symbol VCBO VEBO VBE hFE Cre fT GP NF Conditions IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCE = 6 V, IC = 1 mA VCE = 6 V, IC = 1 mA VCB = 6 V, IE = -1 mA, f = 10.7 MHz VCB = 6 V, IE = -1 mA, f = 200 MHz VCB = 6 V, IE = -1 mA, f = 100 MHz VCB = 6 V, IE = -1 mA, f = 100 MHz 450 20 3.3 5 65 0.8 650 Min 30 3 0.72 260 1 Typ Max Unit V V V pF MHz dB dB Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE C 65 to 160 D 100 to 260 Publication date: November 2002 SJC00099CED 1 2SC1047 PC Ta 500 IC VCE 12 Ta = 25C IB = 100 A 80 A 60 A 6 40 A IC I B 12 Ta = 25C VCE = 10 V 6V Collector power dissipation PC (mW) 400 10 10 Collector current IC (mA) Collector current IC (mA) 8 8 300 6 200 4 4 100 2 20 A 2 0 0 40 80 120 160 0 0 6 12 18 0 0 60 120 180 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base current IB (A) IC VBE VCE = 6 V 25C Ta = 75C 20 -25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 10 hFE IC 360 VCE = 6 V 30 25 10 Forward current transfer ratio hFE 300 Collector current IC (mA) 240 Ta = 75C 25C 120 -25C 15 1 180 10 0.1 25C Ta = 75C 5 -25C 0.01 0.1 60 0 0 0.4 0.8 1.2 1.6 2.0 1 10 100 0 0.1 1 10 100 Base-emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT I E 1 200 Ta = 25C Zrb IE Common-emitter reverse transfer capacitance Cre (pF) 120 Cre VCE f = 2 MHz Ta = 25C 2.4 Reverse transfer impedance Zrb () Transition frequency fT (MHz) 1 000 VCB = 10 V 800 6V 600 100 2.0 IC = 1 mA f = 10.7 MHz Ta = 25C 80 1.6 60 1.2 400 40 0.8 200 20 VCE = 6 V 10 V 0.4 0 - 0.1 -1 -10 -100 0 - 0.1 -1 -10 0 0.1 1 10 100 Emitter current IE (mA) Emitter current IE (mA) Collector-emitter voltage VCE (V) 2 SJC00099CED 2SC1047 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1.2 IE = 0 f = 1 MHz Ta = 25C GP IE 40 35 30 f = 100 MHz Rg = 50 Ta = 25C 12 NF IE f = 100 MHz Rg = 50 Ta = 25C 1.0 10 0.8 Noise figure NF (dB) Power gain GP (dB) VCE = 10 V 6V 8 25 20 15 10 0.6 6 0.4 4 VCE = 6 V, 10 V 0.2 2 5 0 0 5 10 15 20 25 30 0 - 0.1 -1 -10 -100 0 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Emitter current IE (mA) Emitter current IE (mA) bie gie 20 18 yie = gie + jbie VCE = 10 V -4 mA 150 bre gre 0 bfe gfe 10.7 25 0 Forward transfer susceptance bfe (mS) Reverse transfer susceptance bre (mS) Input susceptance bie (mS) 16 14 12 -2 mA 100 -7 mA 100 yre = gre + jbre VCE = 10 V -1 -1 mA -4 mA IE = -7 mA - 0.4 mA -1 mA -20 150 -40 10.7 100 -2 mA 150 58 25 -2 58 -3 -4 mA 100 58 IE = - 0.5 mA 10 8 6 4 2 0 -1 mA 58 f = 15 MHz -60 IE = -7 mA -80 100 58 25 25 f = 10.7 MHz -4 100 -5 f = 150 MHz - 0.4 - 0.3 - 0.2 - 0.1 0 -100 yfe = gfe + jbfe VCE = 10 V 0 20 40 60 80 100 0 3 6 9 12 15 -6 - 0.5 -120 Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) boe goe IE = - 0.5 mA -1 mA 1.2 150 -2 mA -4 mA 100 1.0 Output susceptance boe (mS) 0.8 -7 mA 0.6 58 0.4 25 0.2 f = 10.7 MHz 0 0 0.1 0.2 yoe = goe + jboe VCE = 10 V 0.3 0.4 0.5 Output conductance goe (mS) SJC00099CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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